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| VLB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VLB100-12 is Designed for PACKAGE STYLE .500 4L FLG .112x45 A FULL R O.125 NOM. L FEATURES: * * * OmnigoldTM Metalization System C B E D G MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC 20 A 36 V 18 V 4.0 V 270 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 0.65 OC/W O O DIM A B C D E F G H I J K L F K H IJ MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 .980 / 24.89 1.050 / 26.67 ORDER CODE: ASI10740 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICES hFE COB PG C IC = 50 mA TC = 25 C O NONETEST CONDITIONS IC = 100 mA IC = 100 mA IE = 10 mA VCE = 12.5 V VCE = 5.0 V VCB = 12.5 V VCC = 12.5 V POUT = 100 W IC = 5.0 A f = 1.0 MHz f = 50 MHz MINIMUM TYPICAL MAXIMUM 36 36 18 4.0 15 20 --400 7.0 60 UNITS V V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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